It can also be defined as when a diode resists the highest voltage in the condition of reverse-bias before gets damage. So, during the negative half cycle, care must be taken because the highest value of AC voltage must be below the rated value of the PIV of the diode.
Every diode has a specific PIV value based on the manufacturers. The voltage in reverse bias must beat this PIV otherwise the diode will damage. The max peak voltage that a diode can resist within the reverse nonconducting region is known as PIV. So, up to this max voltage, the diode can block the conduction of current within the opposite direction because the diode is a unidirectional device.
If the voltage of the diode is higher than PIV which is applied across the PN junction diode, then it travels throughout an avalanche breakdown. This high current can damage the diode as well as the device. So the voltage should be higher PIV so that de devices can be protected.
For peak inverse voltage calculation , the following circuit can be considered. The calculation of PIV for the Si diode can be done in the reverse bias of the diode. When the D2 diode is reverse biased, the total voltage of the secondary winding of the transformer is dropped across it. The voltage drop across the diode D1 ie in conducting diode is assumed to be zero.
Here D1 will be in forward bias and D2 will be in reverse bias condition. Hence, the PIV or breakdown reverse voltage is the peak value of the reverse voltage to which the diode gets subjected to the secondary winding of the transformer.
Neglect the voltage drop of the diode D1. If the drop across the diode is assumed as 0. The importance of peak inverse voltage is shown in the reverse bias condition of the diode. Because, if this value exceeds the diode might get damaged.
When the diode is non-conducting, the reverse voltage gets across the diode. This peak value of the reverse voltage decides the peak inverse voltage or PIV rating of the diode. This rating is used to analyze the capacity of the diode that can withstand reverse bias condition without breakdown. The PIV of the diode in the half-wave rectifier is equal to the maximum value of the supply voltage. In rectifier circuits like half-wave, full-wave, center-tapped, and bridge circuits, the PIV of silicon diode is the maximum value of the AC sinusoidal supply voltage that exists across the diode in reverse bias condition, which is equal to Esm.
If the PIV exceeds across the junction of the diode in reverse bias condition beyond the specified PIV rating, then the junction gets damaged or breakdown occurs. The I FSM forward surge maximum rating is the maximum current that the diode can handle as an occasional transient or from a circuit fault. Search Search.
Peak Inverse Voltage PIV The peak inverse voltage rating of a diode is the maximum reverse voltage that can be connected across a diode without breakdown. Maximum Average Forward Current I F avg max The maximum average forward current is the maximum current a diode can safely handle when forward-biased.
Reverse Recovery Time t rr The reverse recovery time of a diode is of great significance in high speed switching applications. Maximum Junction Temperature This parameter defines the maximum junction temperature that a diode can withstand without failure. Log in to post comments. Basic Electronics. Semiconductor Memories. Magnetic Bubble Memories.
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